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HYB25D256400BCL-7 参数 Datasheet PDF下载

HYB25D256400BCL-7图片预览
型号: HYB25D256400BCL-7
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX4, 0.75ns, CMOS, PBGA60]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 83 页 / 3071 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB25D256[400/800/160]B[T/C](L)  
256-Mbit Double Data Rate SDRAM  
Functional Description  
issued until tRP is met. Note that part of the row precharge time is hidden during the access of the last data  
elements.  
In the case of a Read being executed to completion, a Precharge command issued at the optimum time (as  
described above) provides the same operation that would result from the same Read burst with Auto Precharge  
enabled. The disadvantage of the Precharge command is that it requires that the command and address busses  
be available at the appropriate time to issue the command. The advantage of the Precharge command is that it  
can be used to truncate bursts.  
CAS Latency = 2  
CK  
CK  
Read  
NOP  
BST  
NOP  
NOP  
NOP  
Command  
Address  
BAa, COL n  
CL=2  
DQS  
DQ  
DOa-n  
No further output data after this point.  
DQS tristated.  
CAS Latency = 2.5  
CK  
CK  
Read  
NOP  
BST  
NOP  
NOP  
NOP  
Command  
Address  
BAa, COL n  
CL=2.5  
DQS  
DQ  
DOa-n  
No further output data after this point.  
DQS tristated.  
DO a-n = data out from bank a, column n.  
Cases shown are bursts of 8 terminated after 4 data elements.  
3 subsequent elements of data out appear in the programmed order following DO a-n.  
Shown with nominal tAC, tDQSCK, and tDQSQ  
Don’t Care  
.
Figure 14 Terminating a Read Burst: CAS Latencies (Burst Length = 8)  
Data Sheet  
30  
Rev. 1.21, 2004-07  
02102004-TSR1-4ZWW  
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