Internet Data Sheet
HYB18H1G321AF–10/11/14
1-Gbit GDDR3
5.8
Termination IV Characteristic at 120 Ohms
Figure 18 represents the DQ or ADD/CMD termination Pull-Up IV characteristic under process, voltage and temperature best
and worst case conditions. The actual termination Pull-Up current must lie between these two bounding curves. The value of
the external ZQ resistor is 240 Ω, setting the nominal termination impedance to 120 Ω. (Extended Mode Register programmed
to ZQ/2 for DQ terminations or CKE = 0 at the RES transition during Power-Up for ADD/CMD terminations).
FIGURE 18
120 Ohm Active Termination Characteristic
ꢆꢇꢅꢀ2KPꢀ7HUPLQDWLRQꢀ&KDUDFWHUVWLFV
ꢀꢋꢀ
ꢀꢋꢅ
ꢂꢋꢀ
ꢂꢋꢅ
ꢃꢋꢀ
ꢀ
ꢏꢃ
ꢏꢄ
ꢏꢆ
ꢏꢉ
ꢏꢂꢀ
ꢏꢂꢃ
ꢏꢂꢄ
ꢏꢂꢆ
9''4ꢀꢃꢀ9RXWꢀꢁ9ꢂ
Table 18 lists the numerical values of the minimum and maximum allowed values of the termination IV characteristic.
TABLE 18
Programmed Terminator Characteristics of 120 Ohm
Voltage (V)
Terminator Pull-Up Current (mA)
Voltage (V)
Terminator Pull-Up Current (mA)
Minimum
Maximum
Minimum
Maximum
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-0.81
-1.60
-2.34
-3.06
-3.74
-4.39
-5.00
-5.58
-6.12
-6.63
-1.09
-2.14
-3.15
-4.12
-5.06
-5.94
-6.79
-7.59
-8.35
-9.06
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
-7.11
-7.57
-8.02
-8.47
-8.91
-9.35
-9.79
-10.22
—
-9.72
-10.42
-11.00
-11.67
-12.33
-13.05
-13.75
-14.43
-15.08
-15.69
—
Rev. 0.92, 2007-10
34
06122007-MW7D-3G3M
QIMONDA [ QIMONDA AG ]
