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HYB18TC256800BF-2.5 参数 Datasheet PDF下载

HYB18TC256800BF-2.5图片预览
型号: HYB18TC256800BF-2.5
PDF下载: 下载PDF文件 查看货源
内容描述: 256兆位双数据速率 - 双SDRAM的 [256-Mbit Double-Data-Rate-Two SDRAM]
分类和应用: 动态存储器
文件页数/大小: 62 页 / 3539 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB18TC256[80/16]0BF  
256-Mbit Double-Data-Rate-Two SDRAM  
Parameter  
Symbol Note  
1)2)3)4)5)6)  
Self-Refresh Current  
IDD6  
CKE 0.2 V; external clock off, CK and CK at 0 V; Other control and address inputs are floating, Data  
bus inputs are floating.  
1)2)3)4)5)6)7)  
Operating Bank Interleave Read Current  
IDD7  
All banks interleaving reads, IOUT = 0 mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD) -1 × tCK(IDD); tCK = tCK(IDD)  
,
t
RC = tRC(IDD), tRRD = tRRD(IDD); CKE is HIGH, CS is HIGH between valid commands. Address bus inputs  
are stable during deselects; Data pattern is same as IDD4R;  
Refer to the following pages for detailed timing conditions  
1)  
2)  
3)  
VDDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ± 0.1 V  
IDD specifications are tested after the device is properly initialized.  
DD parameter are specified with ODT disabled.  
I
4) Data Bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS and UDQS.  
5) For IDD definition see Table 40  
6) Timing parameter minimum and maximum values for IDD current measurements are defined in Chapter 7.  
7) A - Activate, RA - Read with Auto-Precharge, D - Deselect  
TABLE 40  
Definition for IDD  
Parameter  
Description  
LOW  
Defined as VIN VIL(AC).MAX  
HIGH  
Defined as VIN VIH(AC).MIN  
STABLE  
FLOATING  
SWITCHING  
Defined as inputs are stable at a HIGH or LOW level  
Defined as inputs are VREF = VDDQ / 2  
Defined as: Inputs are changing between high and low every other clock (once per two clocks) for address  
and control signals, and inputs changing between high and low every other clock (once per clock) for DQ  
signals not including mask or strobes  
Detailed IDD7  
The detailed timings are shown below for IDD7. Changes will be required if timing parameter changes are made to the  
specification.  
Legend: A - Active; RA - Read with Autoprecharge; D - Deselect  
IDD7: Operating Current: All Bank Interleave Read operation  
All banks are being interleaved at minimum tRC(IDD) without violating tRRD(IDD) and ttFAW(IDD) using a burst length of 4. Control  
and address bus inputs are STABLE during Deselect. IOUT = 0 mA  
Timing Patterns for 4 bank devices with 1 KB or 2 KB page size  
-DDR2-400 4-4-4: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D D D  
-DDR2-400 3-3-3: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D  
-DDR2-533 4-4-4: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D  
-DDR2-533 3-3-3: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D  
-DDR2-667 5-5-5: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D  
-DDR2-667 4-4-4: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D  
-DDR2-800 6-6-6: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D D  
-DDR2-800 5-5-5: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D  
Rev. 1.3, 2007-05  
32  
07182006-DD60-22E6  
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