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HYB18TC256800BF-2.5 参数 Datasheet PDF下载

HYB18TC256800BF-2.5图片预览
型号: HYB18TC256800BF-2.5
PDF下载: 下载PDF文件 查看货源
内容描述: 256兆位双数据速率 - 双SDRAM的 [256-Mbit Double-Data-Rate-Two SDRAM]
分类和应用: 动态存储器
文件页数/大小: 62 页 / 3539 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB18TC256[80/16]0BF  
256-Mbit Double-Data-Rate-Two SDRAM  
6
Specifications and Conditions  
This chapter describes the Current Measurement, Specifications and Conditions.  
TABLE 39  
DD Specification Parameters and Test Conditions  
I
Parameter  
Symbol Note  
1)2)3)4)5)6)  
Operating Current - One bank Active - Precharge  
IDD0  
t
CK = tCK(IDD), tRC = tRC(IDD), tRAS = tRAS.MIN(IDD), CKE is HIGH, CS is HIGH between valid commands.  
Address and control inputs are switching; Databus inputs are switching.  
1)2)3)4)5)6)  
Operating Current - One bank Active - Read - Precharge  
IDD1  
I
OUT = 0 mA, BL = 4, tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRAS.MIN(IDD), tRCD = tRCD(IDD), AL = 0, CL =  
CL(IDD); CKE is HIGH, CS is HIGH between valid commands. Address and control inputs are  
switching; Databus inputs are switching.  
1)2)3)4)5)6)  
1)2)3)4)5)6)  
1)2)3)4)5)6)  
1)2)3)4)5)6)  
1)2)3)4)5)6)  
1)2)3)4)5)6)  
1)2)3)4)5)6)  
Precharge Power-Down Current  
All banks idle; CKE is LOW; tCK = tCK(IDD);Other control and address inputs are stable; Data bus inputs  
are floating.  
IDD2P  
Precharge Standby Current  
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK(IDD); Other control and address inputs are switching,  
Data bus inputs are switching.  
IDD2N  
Precharge Quiet Standby Current  
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK(IDD); Other control and address inputs are stable,  
Data bus inputs are floating.  
IDD2Q  
IDD3P(0)  
IDD3P(1)  
IDD3N  
Active Power-Down Current  
All banks open; tCK = tCK(IDD), CKE is LOW; Other control and address inputs are stable; Data bus  
inputs are floating. MRS A12 bit is set to “0” (Fast Power-down Exit).  
Active Power-Down Current  
All banks open; tCK = tCK(IDD), CKE is LOW; Other control and address inputs are stable, Data bus  
inputs are floating. MRS A12 bit is set to 1 (Slow Power-down Exit);  
Active Standby Current  
All banks open; tCK = tCK(IDD); tRAS = tRAS.MAX(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid  
commands. Address inputs are switching; Data Bus inputs are switching;  
Operating Current  
IDD4R  
Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CL(IDD); tCK = tCK(IDD); tRAS  
= tRAS.MAX.(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands. Address inputs are  
switching; Data Bus inputs are switching; IOUT = 0 mA.  
1)2)3)4)5)6)  
Operating Current  
IDD4W  
Burst Write: All banks open; Continuous burst writes; BL = 4; AL = 0, CL = CL(IDD); tCK = tCK(IDD); tRAS  
= tRAS.MAX(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands. Address inputs are  
switching; Data Bus inputs are switching;  
1)2)3)4)5)6)  
1)2)3)4)5)6)  
Burst Refresh Current  
IDD5B  
t
CK = tCK(IDD), Refresh command every tRFC = tRFC(IDD) interval, CKE is HIGH, CS is HIGH between valid  
commands, Other control and address inputs are switching, Data bus inputs are switching.  
Distributed Refresh Current  
IDD5D  
t
CK = tCK(IDD), Refresh command every tREFI = 7.8 µs interval, CKE is LOW and CS is HIGH between  
valid commands, Other control and address inputs are switching, Data bus inputs are switching.  
Rev. 1.3, 2007-05  
31  
07182006-DD60-22E6  
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