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HYB18T512161BF-20 参数 Datasheet PDF下载

HYB18T512161BF-20图片预览
型号: HYB18T512161BF-20
PDF下载: 下载PDF文件 查看货源
内容描述: 512 - Mbit的X16 DDR2 SDRAM [512-Mbit x16 DDR2 SDRAM]
分类和应用: 内存集成电路动态存储器双倍数据速率
文件页数/大小: 41 页 / 2261 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB18T512161BF–20/22/25/28/33  
512-Mbit Double-Data-Rate-Two SDRAM  
5
Electrical Characteristics  
TABLE 15  
DRAM Component Operating Temperature Range  
Symbol  
Parameter  
Rating  
Unit  
Note  
1)2)3)4)  
TCASE  
Operating Temperature  
0 to 95  
°C  
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM.  
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the DRAM case  
temperature must be maintained between 0 - 95 °C under all other specification parameters.  
3) Above 85 °C case temperature the Auto-Refresh command interval has to be reduced to tREFI = 3.9 µs.  
4) When operating this product in the 85 °C to 95 °C TCASE temperature range, the High Temperature Self Refresh has to be enabled by  
setting EMR(2) bit A7 to “1“. Note, when the High Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50%  
5.1  
Absolute Maximum Ratings  
TABLE 16  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
min.  
Unit  
Note  
max.  
1)  
VDD  
Voltage on VDD pin relative to VSS  
Voltage on VDDQ pin relative to VSS  
Voltage on VDDL pin relative to VSS  
Voltage on any pin relative to VSS  
Junction Temperature  
–1.0  
–0.5  
–0.5  
–0.5  
2.3  
2.3  
2.3  
2.3  
125  
150  
V
1)  
VDDQ  
VDDL  
VIN, VOUT  
TJ  
V
1)  
V
1)  
V
1)  
°C  
°C  
1)2)  
TSTG  
Storage Temperature  
–55  
1) Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating  
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this  
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.  
Rev. 1.43, 2006-11  
18  
03292006-L40N-L04G  
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