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HYB18T1G160AF-5 参数 Datasheet PDF下载

HYB18T1G160AF-5图片预览
型号: HYB18T1G160AF-5
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX16, 0.6ns, CMOS, PBGA92, ROHS COMPLIANT, PLASTIC, TFBGA-92]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 53 页 / 2560 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB18T1G[40/80/16]0AF(L)–[3S/3.7/5]  
1-Gbit DDR2 SDRAM  
Timing Characteristics  
Table 36  
Timing Parameter by Speed Grade - DDR2–667 (cont’d)  
Parameter  
Symbol  
DDR2–667  
Unit  
Note1)2)3)4)5)6)  
Min.  
Max.  
12  
OCD drive mode output delay  
Data output hold time from DQS  
Data hold skew factor  
tOIT  
0
ns  
tQH  
t
HPQ tQHS  
tQHS  
tREFI  
340  
7.8  
3.9  
ps  
µs  
µs  
ns  
15)16)  
17)  
Average periodic refresh Interval  
18)  
Auto-Refresh to Active/Auto-Refresh  
command period  
tRFC  
127.5  
Read preamble  
Read postamble  
tRPRE  
tRPST  
tRRD  
0.9  
1.1  
0.60  
tCK  
tCK  
ns  
ns  
ns  
tCK  
tCK  
ns  
0.40  
7.5  
19)  
22)  
Active bank A to Active bank B command  
period  
10  
Internal Read to Precharge command delay tRTP  
7.5  
Write preamble  
Write postamble  
tWPRE  
tWPST  
tWR  
0.35 x tCK  
0.40  
15  
20)  
21)  
0.60  
Write recovery time for write without Auto-  
Precharge  
Write recovery time for write with Auto-  
Precharge  
WR  
t
WR/tCK  
tCK  
22)  
23)  
Internal Write to Read command delay  
tWTR  
7.5  
2
ns  
Exit power down to any valid command  
(other than NOP or Deselect)  
tXARD  
tCK  
Exit active power-down mode to Read  
command (slow exit, lower power)  
tXARDS  
tXP  
7 – AL  
2
tCK  
tCK  
Exit precharge power-down to any valid  
command (other than NOP or Deselect)  
Exit Self-Refresh to non-Read command  
Exit Self-Refresh to Read command  
1) VDDQ = 1.8V ± 0.1V; VDD = 1.8V ± 0.1 V. See notes 6)7)  
tXSNR  
tXSRD  
t
RFC +10  
ns  
200  
tCK  
2) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be  
powered down and then restarted through the specified initialization sequence before normal operation can continue.  
3) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a  
differential Slew Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are  
further guaranteed for normal OCD drive strength (EMRS(1) A1 = 0) only.  
4) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross.  
The DQS / DQS, RDQS/ RDQS, input reference level is the crosspoint when in differential strobe mode.  
5) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is  
recognized as low.  
6) The output timing reference voltage level is VTT.  
7) For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period.  
WR refers to the WR parameter stored in the MR.  
8) The clock frequency is allowed to change during self-refresh mode or precharge power-down mode. In case of clock  
frequency change during power-down, a specific procedure is required.  
9) Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as  
output Slew Rate mis-match between DQS / DQS and associated DQ in any given cycle.  
10) ×4 & ×8 (1k page size)  
Internet Data Sheet  
38  
Rev. 1.31, 2007-01  
03292006-1X3H-6X8S  
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