Internet Data Sheet
HY[B/E]18M256[16/32]0CF
256-Mbit DDR Mobile-RAM
3
Electrical Characteristics
3.1
Operating Conditions
TABLE 8
Absolute Maximum Ratings
Parameter
Symbol
Values
Unit Note
Min.
Max.
Power Supply Voltage
Power Supply Voltage for Output Buffer
Input Voltage
VDD
VDDQ
VIN
-0.3
-0.3
-0.3
-0.3
2.7
2.7
V
–
–
–
–
–
–
–
–
V
V
V
DDQ + 0.3
DDQ + 0.3
V
Output Voltage
VOUT
TC
V
Operation Case Temperature
Storage Temperature
Power Dissipation
Extended
-25°
-55
–
+85
+150
0.7
°C
°C
W
mA
TSTG
PD
Short Circuit Output Current
IOUT
–
50
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.Maximum ratings are
absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated
circuit.
TABLE 9
Pin Capacitances
Parameter
Symbol
Values
Unit Note1)
2)3)
Min.
Max.
Input capacitance: CK, CK
CI1
CI2
CIO
2.5
1.5
2.0
5.0
3.5
4.5
pF
pF
pF
–
–
–
Input capacitance: all other input-only pins
Input/output capacitance: DQ, DQS, DM
1) These values are not subject to production test but verified by device characterization.
2) Input capacitance is measured according to JEP147 procedure for measuring capacitance using a vector network analyzer. VDD, VDDQ are
applied and all other pins (except the pin under test) are floating. DQ’s should be in high impedance state. This may be achieved by pulling
CKE to low level.
3) Although DM is an input-only pin, it’s input capacitance models the input capacitance of the DQ and DQS pins.
Rev.1.44, 2007-07
14
06262007-JK8G-48BV
QIMONDA [ QIMONDA AG ]
