Internet Data Sheet
HY[B/E]18M256[16/32]0CF
256-Mbit DDR Mobile-RAM
TABLE 10
Electrical Characteristics
Parameter
Symbol
Values
Unit
Note1)2)
Min.
1.70
Max.
Power Supply Voltage
VDD
VDDQ
IIL
1.95
1.95
1.0
V
–
–
–
–
Power Supply Voltage for DQ Output Buffer
Input leakage current
1.70
-1.0
-1.0
V
μΑ
μA
Output leakage current
IOL
1.0
Address and Command Inputs (BA, BA1, CKE, CS, RAS, CAS, WE)
Input high voltage
VIH
VIL
0.8 × VDDQ
V
DDQ + 0.3
V
V
–
–
Input low voltage
-0.3
0.2 × VDDQ
Clock Inputs (CK, CK)
DC input voltage
VIN
-0.3
V
V
V
DDQ + 0.3
DDQ + 0.6
DDQ + 0.6
V
V
V
V
–
3)
DC input differential voltage
AC input differential voltage
AC differential cross point voltage
Data Inputs (DQ, DM, DQS)
DC input high voltage
VID(DC)
VID(AC)
VIX
0.4 × VDDQ
0.6 × VDDQ
3)
4)
0.4 × VDDQ 0.6 × VDDQ
VIHD(DC)
VILD(DC)
VIHD(AC)
VILD(AC)
0.7 × VDDQ
-0.3
V
DDQ + 0.3
0.3 x VDDQ
VDDQ + 0.3
V
V
V
V
–
–
–
–
DC input low voltage
AC input high voltage
0.8 × VDDQ
-0.3
AC input low voltage
0.2 × VDDQ
Data Outputs (DQ, DQS)
Output high voltage (IOH = -0.1 mA)
Output low voltage (IOL = 0.1 mA)
VOH
VOL
0.9 × VDDQ
–
V
V
–
–
–
0.1 × VDDQ
1) 0 °C ≤ TC ≤ 70 °C (comm.); -25°C ≤ TC ≤ 85 °C (ext.)All voltages referenced to VSS. VSS and VSSQ must be at same potential.
2) See Table 12 and Figure 4 for overshoot and undershoot definition.
3)
VID is the magnitude of the difference between the input level on CK and the input level on CK.
4) The value of VIX is expected to be equal to 0.5 x VDDQ and must track variations in the DC level.
Rev.1.44, 2007-07
15
06262007-JK8G-48BV