HY[B/E]18L256160B[C/F]X-7.5
256-Mbit Mobile-RAM
Electrical Characteristics
3
Electrical Characteristics
3.1
Operating Conditions
Table 17
Absolute Maximum Ratings
Parameter
Symbol
Values
Unit
min.
-0.3
-0.3
-0.3
-0.3
0
max.
2.7
Power Supply Voltage
Power Supply Voltage for Output Buffer
Input Voltage
VDD
VDDQ
VIN
V
V
2.7
V
DDQ + 0.3
DDQ + 0.3
+70
V
Output Voltage
VOUT
TC
V
V
Operation Case Temperature
Commercial
Extended
°C
°C
°C
W
mA
-25
-55
–
+85
Storage Temperature
Power Dissipation
TSTG
PD
+150
0.7
Short Circuit Output Current
IOUT
–
50
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit.
Table 18
Pin Capacitances1)2)
Parameter
Symbol
Values
Unit
min.
1.5
max.
3.0
Input capacitance: CLK
CI1
CI2
CIO
pF
pF
pF
Input capacitance: all other input pins
Input/Output capacitance: DQ
1.5
3.0
3.0
5.0
1) These values are not subject to production test but verified by device characterization.
2) Input capacitance is measured according to JEP147 with VDD, VDDQ applied and all other pins (except the pin under test)
floating. DQ’s should be in high impedance state. This may be achieved by pulling CKE to low level.
Data Sheet
40
Rev. 1.11, 2007-01
07142005-CR47-RB2E
QIMONDA [ QIMONDA AG ]
