HY[B/E]18L256160B[C/F]X-7.5
256-Mbit Mobile-RAM
Electrical Characteristics
Table 19
Electrical Characteristics1)
Parameter
Symbol
Values
Unit Notes
min.
1.70
1.70
max.
1.95
1.95
DDQ + 0.3
0.3
Power Supply Voltage
VDD
VDDQ
VIH
V
V
–
Power Supply Voltage for DQ Output Buffer
Input high voltage
–
2)
0.8 × VDDQ
V
V
2)
Input low voltage
VIL
-0.3
V
Output high voltage (IOH = -0.1 mA)
Output low voltage (IOL = 0.1 mA)
Input leakage current
VOH
VOL
IIL
V
DDQ - 0.2
–
–
V
–
–
–
–
0.2
V
-1.0
1.0
µA
µA
Output leakage current
IOL
-1.5
1.5
1)
0
°C
≤
TC
≤
70
°C (comm.), -25
°C
≤
TC
≤
85
°
C (ext.); all voltages referenced to VSS
.
V
SS and VSSQ must be at same potential.
2) VIH may overshoot to VDD + 0.8 V for pulse width < 4 ns; VIL may undershoot to -0.8 V for pulse width < 4 ns.
Pulse width measured at 50% with amplitude measured between peak voltage and DC reference level.
Data Sheet
41
Rev. 1.11, 2007-01
07142005-CR47-RB2E
QIMONDA [ QIMONDA AG ]
