Internet Data Sheet
HYB18H256321BF
256-Mbit GDDR3
1
Overview
This chapter lists all main features of the product family HYB18H256321BF and the ordering information.
1.1
Features
•
•
•
•
•
•
2.0 V VDDQ IO voltage HYB18H256321BF–10
2.0 V VDD core voltage HYB18H256321BF–10
1.8 V VDDQ IO voltage HYB18H256321BF–11/12/14
1.8 V VDD core voltage HYB18H256321BF–11/12/14
Organization: 2048K × 32 × 4 banks
4096 rows and 512 columns (128 burst start locations) per
bank
Differential clock inputs (CLK and CLK)
CAS latencies of 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17
Write latencies of 3, 4, 5, 6, 7
•
•
Data mask for write commands
Single ended READ strobe (RDQS) per byte. RDQS edge-
aligned with READ data
Single ended WRITE strobe (WDQS) per byte. WDQS
center-aligned with WRITE data
DLL aligns RDQS and DQ transitions with Clock
Programmable IO interface including on chip termination
(ODT)
•
•
•
•
•
•
•
•
•
•
•
•
Autoprecharge option with concurrent auto precharge
support
4k Refresh (32ms)
Burst sequence with length of 4, 8.
4n pre fetch
Short RAS to CAS timing for Writes
•
•
•
•
•
Autorefresh and Self Refresh
PG–TFBGA–136 package (10mm × 14mm)
Calibrated output drive. Active termination support
RoHS Compliant Product1)
t
t
RAS Lockout support
WR programmable for Writes with Auto-Precharge
TABLE 1
Ordering Information
Part Number1)
Organisation
Clock (MHz)
Package
HYB18H256321BF–11/12/14
HYB18H256321BF–10
×32
1000/900/800/700
PG–TFBGA–136
1) HYB: designator for memory components
18H: VDDQ = 1.8 V
256: 256-Mbit density
32: Organization
B: Product revision
F: Lead- and Halogen-Free
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Rev. 0.80, 2007-09
3
09132007-07EM-7OYI
QIMONDA [ QIMONDA AG ]
