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HYB15T1G400C2F-3S 参数 Datasheet PDF下载

HYB15T1G400C2F-3S图片预览
型号: HYB15T1G400C2F-3S
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, PLASTIC, TFBGA-60]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 59 页 / 1885 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB15T1G[40/80/16]0C2F  
1-Gbit Double-Data-Rate-Two SDRAM  
Field  
Bits  
Type1)  
Description  
CL  
[6:4]  
w
CAS Latency  
Note: All other bit combinations are illegal.  
011B CL 3  
100B CL 4  
101B CL 5  
110B CL 6  
111B CL 7  
BT  
BL  
3
w
w
Burst Type  
0B  
1B  
BT Sequential  
BT Interleaved  
[2:0]  
Burst Length  
Note: All other bit combinations are illegal.  
010B BL 4  
011B BL 8  
1) w = write only register bits  
2) Number of clock cycles for write recovery during auto-precharge. WR in clock cycles is calculated by dividing tWR (in ns) by tCK (in ns) and  
rounding up to the next integer: WR [cycles] tWR (ns) / tCK (ns). The mode register must be programmed to fulfill the minimum requirement  
for the analogue tWR timing WRMIN is determined by tCK.MAX and WRMAX is determined by tCK.MIN  
.
Rev. 1.00, 2008-08  
19  
11202007-1NZ2-6U4E  
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