P4C1041L - LOW POWER 256K X 16 STATIC CMOS RAM
DATA RETEꢀTIOꢀ
Sym
Parameter
Test Conditions
Min
Max
5.5
30
Unit
CE ≥ VCC - 0.2V,
VIN ≥ VCC - 0.2V or VIN ≤ 0.2V
VDR
VCC for Data Retention
2.0
V
ICCDR
tCDR
tR
Data Retention Current
VDR=2.0V
µA
ns
ns
Chip Deselect to Data Retention Time
Operating Recovery Time
See Retention Waveform
0
tRC
LOW VCC DATA RETEꢀTIOꢀ WAVEFORM
Document # SRAM142 REV OR
Page 8