P4C1041L - LOW POWER 256K X 16 STATIC CMOS RAM
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
-55
Sym Parameter
Unit
Min
Max
tRC
tAA
Read Cycle Time
55
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
55
55
30
tAC
tOE
tLZ
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
Byte Access Time
10
5
tOLZ
tHZ
20
20
tOHZ
tOH
tBE
10
10
55
25
tHZBE Byte Disable to High-Z Output
tLZBE Byte Enable to Low-Z Output
Document # SRAM142 REV OR
Page 3