P4C1041L - LOW POWER 256K X 16 STATIC CMOS RAM
AC CHARACTERISTICS—WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
-55
Sym
Parameter
Unit
Min
Max
tWC
tAW
tCW
tAS
Write Cycle Time
55
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Valid to End of Write
Chip Enable to End of Write
Address Setup Time
50
50
0
tWP
tWR
tDW
tDH
tOW
tWZ
tBW
Write Pulse Width
45
0
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
Byte Enable to End of Write
25
0
5
20
45
TIMIꢀꢂ WAVEFORM OF WRITE CYCLE ꢀO. 1 (CE COꢀTROLLED)
Document # SRAM142 REV OR
Page 5
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