P4C1041L - LOW POWER 256K X 16 STATIC CMOS RAM
MAꢃIMUM RATIꢀꢂS(1)
RECOMMEꢀDED OPERATIꢀꢂ COꢀDITIOꢀS
Sym Parameter
Value
Unit
ꢂrade(2)
Ambient Temp
0°C to 70°C
ꢂꢀD
0V
VCC
Power Supply Pin with
VCC
Commercial
Industrial
5.0V ± 10%
5.0V ± 10%
-0.5 to +7.0
V
Respect to GND
-40°C to +85°C
0V
Terminal Voltage with
VTERM
-0.5 to VCC + 0.5
V
Respect to GND
CAPACITAꢀCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)
TA
Operating Temperature
-40 to +85
-40 to +85
-65 to +150
20
°C
°C
TBIAS Temperature Under Bias
TSTG Storage Temperature
IOUT DC Output Current
Sym Parameter
Conditions Typ Unit
°C
CIN
Input Capacitance
Output Capacitance
VIN=0V
6
8
pF
pF
mA
COUT
VOUT=0V
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)(2)
Sym Parameter
Test Conditions
Min
Max
VCC + 0.3
0.6
Unit
VIH Input High Voltage
2.4
V
V
VIL Input Low Voltage
-0.2
VOL Output Low Voltage (TTL Load)
VOH Output High Voltage (TTL Load)
IOL = +2 mA, VCC = Min
IOH = -1 mA, VCC = Min
0.4
V
2.4
-1
V
ILI
Input Leakage Current
VCC = Max, VIN = GND to VCC
+1
+1
µA
VCC = Max,
ILO Output Leakage Current
CE = VIH,
-1
µA
µA
VOUT = GND to VCC
CE ≥ VCC - 0.2V,
VCC = Max,
Standby Power Supply Current (CMOS
Input Levels)
ISB1
f = 0, Outputs Open,
VIN ≥ VCC - 0.2V or
VIN ≤ 0.2V
—
50
Cycle Time = Min,
CE = VIL,
ICC Dynamic Operating Current
60
10
mA
mA
II/O = 0 mA,
Other pins at VIH or VIL
Cycle Time = 1 µs,
CE ≤ 0.2V,
ICC1 Dynamic Operating Current (CMOS)
II/O = 0 mA,
Other pins at 0.2V or VCC - 0.2V
Document # SRAM142 REV OR
Page 2
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