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P4C1041L-55TI 参数 Datasheet PDF下载

P4C1041L-55TI图片预览
型号: P4C1041L-55TI
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 256KX16, 55ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 11 页 / 643 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P4C1041L - LOW POWER 256K X 16 STATIC CMOS RAM  
AC TEST COꢀDITIOꢀS  
Input Pulse Levels  
GND to 3.0V  
Input Rise and Fall Times  
Input Timing Reference Level  
Output Timing Reference Level  
Output Load  
3ns  
1.5V  
1.5V  
See Figures 1 and 2  
Figure 1. Output Load  
Figure 2. Thevenin Equivalent  
* including scope and test fixture.  
ꢀote:  
Because of the ultra-high speed of the P4C1041L, care must be taken  
whentestingthisdevice;aninadequatesetupcancauseanormalfunction-  
ing part to be rejected as faulty. Long high-inductance leads that cause  
supply bounce must be avoided by bringing the VCC and ground planes  
directly up to the contactor fingers. A 0.01 µF high frequency capacitor  
is also required between VCC and ground. To avoid signal reflections,  
proper termination must be used; for example, a 50Ω test environment  
should be terminated into a 50Ω load with 1.77V (Thevenin Voltage) at  
the comparator input, and a 589Ω resistor must be used in series with  
DOUT to match 639Ω (Thevenin Resistance).  
TRUTH TABLE  
Mode  
CE  
H
L
OE  
L
WE  
BLE  
BHE  
I/O0 - I/O7  
High Z  
DOUT  
I/O8 - I/O15  
High Z  
DOUT  
Power  
Standby  
Active  
Active  
Active  
Active  
Active  
Active  
Active  
Powerdown  
Read All Bits  
H
H
H
L
L
L
Read Lower Bits Only  
Read Upper Bits Only  
Write All Bits  
L
L
L
H
L
DOUT  
High Z  
DOUT  
L
L
H
L
High Z  
DIN  
L
H
L
DIN  
Write Lower Bits Only  
Write Upper Bits Only  
Selected, Outputs Disabled  
L
L
L
H
L
DIN  
High Z  
DIN  
L
L
H
High Z  
High Z  
L
H
High Z  
Document # SRAM142 REV OR  
Page 7