MITSUBISHI Nch POWER MOSFET
FY5ACJ-03A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
8
50
40
30
20
10
0
T
C
h = 25°C
V
GS = 0V
I
D
= 5A
Pulse Test
V
DS = 15V
20V
25V
6
TC = 125°C
75°C
25°C
4
2
0
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE
Qg
(nC)
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
4.0
3.2
2.4
1.6
0.8
0
V
GS = 10V
= 5A
Pulse Test
V
DS = 10V
ID = 1mA
I
D
5
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
102
7
5
V
I
GS = 0V
D = 1mA
D = 1.0
3
2
0.5
0.2
0.1
101
7
5
3
2
P
DM
100
7
5
tw
0.05
0.02
0.01
Single Pulse
T
tw
D
=
3
2
T
10–1
–50
0
50
100
150
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102 23 57103
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Sep.1998
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
