MITSUBISHI Nch POWER MOSFET
FY5ACJ-03A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
0.8
0.6
0.4
0.2
0
50
40
30
20
10
0
T
C
= 25°C
T
C
= 25°C
V
GS = 4V
Pulse Test
Pulse Test
10V
I
D
= 15A
10A
5A
3A
0
2
4
6
8
10
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT (A)
ID
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
50
40
30
20
10
0
102
7
T
V
C
= 25°C
V
DS = 10V
DS = 10V
Pulse Test
5
4
3
Pulse Test
T
C
= 25°C
75°C
2
125°C
101
7
5
4
3
2
100
0
2
4
6
8
10
7
100
2
3
4 5
7
101
2
3
4 5 7
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT
ID
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
102
7
t
t
d(off)
f
5
5
4
3
3
2
103
7
Ciss
2
t
t
d(on)
r
5
Coss
Crss
101
7
3
2
5
4
3
102
7
5
T
V
V
R
100
C
h = 25°C
DD = 15V
GS = 10V
GEN = RGS = 50Ω
4 5
T
C
h = 25°C
f = 1MH
GS = 0V
3
2
2
Z
V
101
100
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
7
2
3
7
101
2
3
4 5 7
DRAIN-SOURCE VOLTAGE
V
DS (V)
DRAIN CURRENT
I
D
(A)
Sep.1998
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
