MITSUBISHI Nch POWER MOSFET
FY5ACJ-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 2.5A, VGS = 4V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±0.1
0.1
2.0
30
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
1.5
22
mΩ
mΩ
mV
S
34
55
110
10
150
—
Ciss
760
270
125
15
—
pF
pF
pF
ns
VDS = 10V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
Reverse transfer capacitance
Turn-on delay time
—
td (on)
tr
—
Rise time
20
—
ns
VDD = 15V, ID = 2.5A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
50
—
ns
Fall time
40
—
ns
IS = 1.6A, VGS = 0V
VSD
Source-drain voltage
Thermal resistance
0.75
—
1.10
73.5
—
V
Channel to ambient
Rth (ch-a)
trr
°C/W
ns
IS = 1.6A, dis/dt = –50A/µs
Reverse recovery time
40
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
2.0
1.6
1.2
0.8
0.4
0
5
3
2
tw = 100µs
101
7
5
1ms
3
2
10ms
100
7
5
100ms
3
2
TC = 25°C
Single Pulse
10–1
7
5
DC
0
50
100
150
200
2 3 5 7100 2 3 5 7101 2 3 5 7102
DRAIN-SOURCE VOLTAGE VDS (V)
2
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
40
30
20
10
0
20
16
12
8
5V
VGS = 10V
8V
6V
VGS = 10V
4V
8V
6V
5V
TC = 25°C
Pulse Test
TC = 25°C
Pulse Test
4V
3V
4
3V
PD = 1.7W
PD = 1.7W
0
0
0.4
0.8
1.2
1.6
2.0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
