MITSUBISHI Nch POWER MOSFET
FS5KM-6
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
20
16
12
8
V
GS = 0V
Tch = 25°C
= 5A
Pulse Test
ID
VDS = 50V
TC = 125°C
100V
200V
25°C
75°C
4
4
0
0
0
4
8
12
16
(nC)
20
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE
Qg
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5
5.0
4.0
3.0
2.0
1.0
0
V
DS = 10V
= 1mA
V
GS = 10V
I
D
ID = 1/2ID
Pulse Test
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
1.4
1.2
1.0
0.8
0.6
0.4
V
I
GS = 0V
D = 1mA
D=1
0.5
5
3
2
0.2
0.1
100
7
5
0.05
3
P
DM
0.02
0.01
2
10–1
7
tw
Single Pulse
T
tw
T
5
D=
3
2
10–2
10 10 10 10
–423 57 –323 57 –223 57 –123 57100 23 57101 23 57102
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH
tw (s)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
