MITSUBISHI Nch POWER MOSFET
FS5KM-6
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
300
±30
—
Typ.
—
Max.
—
V
V
(BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V
(BR) GSS Gate-source breakdown voltage IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
Drain-source leakage current VDS = 300V, VGS = 0V
Gate-source threshold voltage ID = 1mA, VDS = 10V
V
V
—
—
IGSS
IDSS
Gate-source leakage current
—
±10
1
µA
mA
V
—
—
VGS (th)
rDS (ON)
VDS (ON)
yfs
2
3
4
Drain-source on-state resistance ID = 2A, VGS = 10V
Drain-source on-state voltage ID = 2A, VGS = 10V
—
1.2
2.4
2.5
270
55
10
11
13
32
22
1.5
—
1.6
3.2
—
Ω
—
V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
ID = 2A, VDS = 10V
1.6
—
S
Ciss
—
pF
pF
pF
ns
ns
ns
ns
V
Coss
Crss
VDS = 25V, VGS = 0V, f = 1MHz
—
—
—
—
td (on)
tr
—
—
—
—
VDD = 150V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
Fall time
—
—
—
—
VSD
Source-drain voltage
Thermal resistance
IS = 2A, VGS = 0V
Channel to case
—
2.0
4.17
Rth (ch-c)
—
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
50
40
30
20
10
0
5
3
2
101
7
tw=10µs
100µs
1ms
5
3
2
100
7
5
10ms
3
T
C
= 25°C
2
Single Pulse
10–1
7
DC
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
2
5
0
50
100
150
200
CASE TEMPERATURE
TC
(°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS = 20V
V
GS = 20V
10
8
5
4
3
2
1
0
10V
10V
PD = 30W
PD = 30W
6V
7V
6V
5V
T
C
= 25°C
Pulse Test
5.5V
T
C
= 25°C
Pulse Test
6
5V
4
4.5V
4V
2
0
0
10
20
30
40
50
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE
VDS (V)
DRAIN-SOURCE VOLTAGE
VDS (V)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
