MITSUBISHI Nch POWER MOSFET
FS5KM-6
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5
4
3
2
40
32
24
16
8
T
C
= 25°C
T
C
= 25°C
Pulse Test
Pulse Test
ID
= 10A
V
GS = 10V
20V
8A
1
0
5A
3A
0
0
4
8
12
16
20
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
10
8
101
7
5
TC
= 25°C
DS = 50V
Pulse Test
VDS = 10V
V
Pulse Test
T
C
= 25°C
75°C
3
2
6
100
125°C
7
5
4
3
2
2
0
10–1
0
4
8
12
16
20
10–1
2
3
5 7 100
2
3
5 7 101
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
3
2
Tch = 25°C
V
V
DD = 150V
5
GS = 10V
102
7
5
3
2
RGEN = RGS = 50Ω
Ciss
t
t
d(off)
f
102
7
3
2
5
Coss
Crss
t
d(on)
r
3
2
101
7
5
t
101
7
3
2
Tch = 25°C
f = 1MHz
GS = 0V
5
3
2
V
100
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
10–1
2
3
5 7 100
2
3
5 7 101
DRAIN-SOURCE VOLTAGE DS (V)
V
DRAIN CURRENT ID (A)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
