MITSUBISHI Nch POWER MOSFET
FS30KM-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5.0
4.0
3.0
2.0
1.0
0
50
40
30
20
10
0
T
C
= 25°C
T
C
= 25°C
Pulse Test
Pulse Test
VGS = 10V
20V
I
D
= 60A
30A
10A
0
4
8
12
16
20
7100 2 3 5 7101 2 3 5 7102 2 3 5 7
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT (A)
ID
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
100
80
60
40
20
0
102
7
T
C
= 25°C
DS = 10V
Pulse Test
V
DS = 10V
V
Pulse Test
5
4
3
2
TC = 25°C
75°C
101
7
125°C
5
4
3
2
100
0
4
8
12
16
20
100
2
3 4 5 7 101
2
3 4 5 7 102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
103
7
Tch = 25°C
5
V
V
DD = 30V
GS = 10V
5
3
2
4
RGEN = RGS = 50Ω
Ciss
3
2
103
7
5
3
2
102
7
Coss
Crss
t
t
d(off)
f
5
102
7
4
3
2
5
3
2
t
t
d(on)
r
Tch = 25°C
f = 1MH
Z
V
GS = 0V
101
101
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
100
2
3 4 5 7 101 3 4 5 7 102
2
DRAIN-SOURCE VOLTAGE
V
DS (V)
DRAIN CURRENT ID (A)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
