MITSUBISHI Nch POWER MOSFET
FS30KM-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
60
—
—
2.0
—
—
14
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
VGS = ±20V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 15A, VGS = 10V
ID = 15A, VGS = 10V
ID = 15A, VDS = 10V
—
±0.1
0.1
4.0
30
—
3.0
23
mΩ
V
0.345
20
0.450
—
S
Ciss
1250
310
150
20
—
pF
pF
pF
ns
ns
ns
ns
V
Coss
Crss
Output capacitance
VDS = 10V, VGS = 0V, f = 1MHz
—
Reverse transfer capacitance
Turn-on delay time
—
td (on)
tr
—
Rise time
50
—
VDD = 30V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
60
—
Fall time
60
—
IS = 15A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
1.0
—
1.5
5.00
—
Rth (ch-c)
trr
°C/W
ns
IS = 30A, dis/dt = –100A/µs
Reverse recovery time
65
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
50
40
30
20
10
0
3
2
102
7
tw = 10ms
5
3
2
101
7
100ms
5
3
2
1ms
10ms
100
7
T
C
= 25°C
5
3
Single Pulse
DC
3
5 7100 2 3 5 7101 2 3 5 7102 2 3
0
50
100
150
200
CASE TEMPERATURE
T
C
(°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS = 20V 10V
50
40
30
20
10
0
30
24
18
12
6
TC = 25°C
Pulse Test
V
GS = 20V
6V
10V
6V
5V
TC = 25°C
Pulse Test
5V
PD
= 25W
4V
PD
= 25W
6
4V
0
0
2
4
8
10
DS (V)
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE
V
DRAIN-SOURCE VOLTAGE
V
DS (V)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
