MITSUBISHI Nch POWER MOSFET
FS30KM-06
HIGH-SPEED SWITCHING USE
FS30KM-06
OUTLINE DRAWING
Dimensions in mm
10 ± 0.3
2.8 ± 0.2
f 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
2.54 ± 0.25
1 2 3
w
¡10V DRIVE
¡VDSS .................................................................................. 60V
¡rDS (ON) (MAX) .............................................................. 30mΩ
¡ID ......................................................................................... 30A
¡Integrated Fast Recovery Diode (TYP.) ............. 65ns
¡Viso ................................................................................ 2000V
q GATE
w DRAIN
e SOURCE
q
e
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
60
±20
V
30
A
IDM
IDA
Drain current (Pulsed)
120
A
Avalanche drain current (Pulsed) L = 100µH
Source current
30
A
IS
30
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
120
A
PD
25
W
°C
Tch
Tstg
Viso
—
–55 ~ +150
–55 ~ +150
2000
2.0
Storage temperature
°C
V
g
Isolation voltage
Weight
AC for 1minute, Terminal to case
Typical value
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
