TISPPBL2SD
PROGRAMMABLE OVERVOLTAGE PROTECTORS
FOR ERICSSON COMPONENTS PBL 3xxx SLICS
AUGUST 1999
subsides the high holding current of the crowbar prevents d.c. latchup. The TISPPBL2S buffered gate design
reduces the loading on the SLIC supply during overvoltages caused by power cross and induction.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high
reliability and in normal system operation they are virtually transparent. The TISPPBL2S is the TISPPBL2D
with a different pinout. The feed-through Ring (leads 4 — 5) and Tip (leads 1 — 8) connections have been
replaced by single Ring (lead 4) and Tip (lead 1) connections. This increases package creepage distance of
the biased to ground connections from about 0.7 mm to over 3 mm.
absolute maximum ratings
RATING
Repetitive peak off-state voltage, I
G
= 0, -40°C
≤
T
J
≤
85°C
Repetitive peak gate-cathode voltage, V
KA
= 0, -40°C
≤
T
J
≤
85°C
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
10/1000 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)
0.2/310 µs (I3124, open-circuit voltage wave shape 0.5/700 µs)
5/310 µs (ITU-T K20 & K21, open-circuit voltage wave shape 10/700 µs)
1/20 µs (ITU-T K22, open-circuit voltage wave shape 1.2/50 µs)
2/10 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)
Non-repetitive peak on-state current, 50/60 Hz (see Notes 1 and 2)
100 ms
1s
5s
300 s
900 s
Non-repetitive peak gate current, 1/2 µs pulse, cathodes commoned (see Note 1)
Operating free-air temperature range
Junction temperature
Storage temperature range
I
GSM
T
A
T
J
T
stg
I
TSM
11
4.5
2.4
0.95
0.93
40
-40 to +85
-40 to +150
-40 to +150
A
°C
°C
°C
A
I
TSP
30
40
40
100
100
A
SYMBOL
V
DRM
V
GKRM
VALUE
-100
-90
UNIT
V
V
NOTES: 1. Initially the protector must be in thermal equilibrium with -40 °C
≤
T
J
≤
85 °C. The surge may be repeated after the device returns to
its initial conditions.
2. These non-repetitive rated currents are peak values for either polarirty. The rated current values may be applied either to the Ring
to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied
simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair). Above
85 °C, derate linearly to zero at 150 °C lead temperature.
recommended operating conditions
MIN
C
G
R
1
Gate decoupling capacitor
TISPPBL2S series resistor for GR-1089-CORE first-level and second-level surge survival
TISPPBL2S series resistor for GR-1089-CORE first-level surge survival
TISPPBL2S series resistor for ITU-T recommendation K20/21
100
40
25
10
Ω
TYP
220
MAX
UNIT
nF
electrical characteristics, T
amb
= 25 °C (unless otherwise noted)
PARAMETER
I
D
Off-state current
V
D
= V
DRM
, V
GK
= 0
TEST CONDITIONS
T
J
= -40 °C
T
J
= 85 °C
MIN
TYP
MAX
-5
-50
UNIT
µA
µA
PRODUCT
2
INFORMATION
POINN [ POWER INNOVATIONS LTD ]
