BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
JULY 1994 - REVISED SEPTEMBER 1997
THERMAL INFORMATION
THERMAL RESPONSE JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
Z
θ
JA
/R
θ
JA
- Normalised Transient Thermal Impedance
1·0
60%
40%
20%
0·1
10%
LDX25DZA
BULD25D
T
A
= 25°C
t1
0·01
0%
duty cycle = t1/t2
Read time at end of t1,
t2
Z
T
J
(
max
)
–
T
A
= P
D
(
peak
)
•
θ
JA
•
R
θ
JA
(
max
)
R
θ
JA
0·001
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t1 - Power Pulse Duration - s
Figure 8.
THERMAL RESPONSE JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
Z
θ
JA
/R
θ
JA
- Normalised Transient Thermal Impedance
1·0
60%
40%
20%
0·1
10%
LDX25SZA
BULD25SL
T
A
= 25°C
t1
0·01
0%
duty cycle = t1/t2
Read time at end of t1,
t2
Z
T
J
(
max
)
–
T
A
= P
D
(
peak
)
•
θ
JA
•
R
θ
JA
(
max
)
R
θ
JA
0·001
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t1 - Power Pulse Duration - s
Figure 9.
PRODUCT
INFORMATION
5
POINN [ POWER INNOVATIONS LTD ]
