BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
JULY 1994 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
30
T
A
= 25°C
I
E
- Instantaneous Forward Current - A
h
FE
- Forward Current Transfer Ratio
LDX25SHF
ANTI-PARALLEL DIODE
INSTANTANEOUS FORWARD CURRENT
vs
INSTANTANEOUS FORWARD VOLTAGE
10
T
A
= 25°C
LDX25DVF
10
1·0
0·1
V
CE
= 1.5 V
V
CE
= 5 V
V
CE
= 10 V
1·0
0·01
0·1
1·0
10
0·01
0
0·5
1·0
1·5
2·0
2·5
3·0
I
C
- Collector Current - A
V
EC
- Instantaneous Forward Voltage - V
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
AMBIENT TEMPERATURE
1.0
V
BE(sat)
- Base-Emitter Saturation Voltage - V
LDX25SVB
I
C
= 0.5 A
I
B
= 0.1 A
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
150
T
A
- Ambient Temperature - °C
Figure 3.
PRODUCT
INFORMATION
3
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