BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
JULY 1994 - REVISED SEPTEMBER 1997
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted) (continued)
RATING
Continuous collector current (see Note 1)
Peak collector current (see Note 2)
Continuous base current (see Note 1)
Peak base current (see Note 2)
Continuous device dissipation at (or below) 25°C ambient temperature
BULD25D
BULD25SL
SYMBOL
I
C
I
CM
I
B
I
BM
P
tot
I
E(av)
T
j
T
stg
VALUE
2
4
1.5
2.5
see Figure 10
see Figure 11
0.5
-65 to +150
-65 to +150
UNIT
A
A
A
A
W
A
°C
°C
Maximum average continuous diode forward current at (or below) 25°C ambient temperature
Operating junction temperature range
Storage temperature range
NOTES: 1. This value applies for t
p
=
1 s.
2. This value applies for t
p
=
10 ms, duty cycle
≤
2%.
electrical characteristics at 25°C ambient temperature
PARAMETER
V
CEO(sus)
I
CES
I
EBO
V
BE(sat)
V
CE(sat)
Collector-emitter
sustaining voltage
Collector-emitter
cut-off current
Emitter cut-off
current
Base-emitter
saturation voltage
Collector-emitter
saturation voltage
Forward current
transfer ratio
Anti-parallel diode
forward voltage
I
C
=
0.1 A
V
BE
= 0
I
C
= 0
I
C
= 0.5 A
I
C
= 0.5 A
I
C
=
1A
I
C
= 0.01 A
I
C
= 0.5 A
I
C
=
1A
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
10
10
10
0.9
0.3
0.6
18
15
15
1.5
20
20
1.7
V
TEST CONDITIONS
MIN
400
10
1
1.1
0.5
1
TYP
MAX
UNIT
V
µA
mA
V
V
V
CE
= 600 V
V
EB
=
I
B
=
I
B
=
I
B
=
9V
0.1 A
0.1 A
0.2 A
V
CE
= 10 V
V
CE
= 1.5 V
V
CE
=
I
E
=
5V
1A
h
FE
V
EC
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 1 mm from the device body for the D package and 3.2 mm from the device body for the SL package.
thermal characteristics
PARAMETER
R
θ
JA
Junction to free air thermal resistance
D package
SL Package
MIN
TYP
MAX
165
115
UNIT
°C/W
switching characteristics at 25°C ambient temperature
PARAMETER
t
rr
t
s
t
f
NOTE
Anti-parallel diode
reverse recovery time
Storage time
Fall time
TEST CONDITIONS
Measured by holding transistor
in an off condition, V
EB
= -3 V
(see Note 5)
(see Note 5)
(see Note 5)
2
MIN
TYP
0.5
3.5
0.25
MAX
1
5
0.35
UNIT
µs
µs
µs
5: Refer to Figures 12, 13 and 14 for Functional Test Circuit and Switching Waveforms.
PRODUCT
INFORMATION
2
POINN [ POWER INNOVATIONS LTD ]
