BULD125KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
THERMAL INFORMATION
THERMAL RESPONSE JUNCTION TO CASE
vs
POWER PULSE DURATION
Z
θ
JC
/R
θ
JC
- Normalised Transient Thermal Impedance
1·0
60%
40%
20%
10%
LD125CZC
BULD125KC
T
C
= 25°C
0·1
0%
t1
duty cycle = t1/t2
Read time at end of t1,
t2
Z
T
J
(
max
)
–
T
C
= P
D
(
peak
)
•
θ
JC
•
R
θ
JC
(
max
)
R
θ
JC
0·01
10
-4
10
-3
10
-2
10
-1
t1 - Power Pulse Duration - s
10
0
10
1
10
2
Figure 7.
MAXIMUM POWER DISSIPATION JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
1000
P
tot
- Maximum Power Dissipation - W
LD125CPA
0%
BULD125KC
T
A
= 25°C
100
10%
10
20%
40%
60%
1·0
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t1 - Power Pulse Duration - s
Figure 8.
PRODUCT
INFORMATION
5
POINN [ POWER INNOVATIONS LTD ]
