BULD125KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
BULD125KC
T
C
= 25°C
LD125CFB
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
14
LD125CRB
12
I
C
- Collector Current - A
I
C
- Collector Current - A
10
I
B(on)
= I
C
/ 5
V
BE(off)
= -5 V
T
C
= 25°C
10
8
1·0
6
0·1
t
p
= 100 µs
t
p
= 1 ms
t
p
= 10 ms
DC Operation
10
100
1000
4
2
0·01
1·0
0
0
100
200
300
400
500
600
700
800
V
CE
- Collector-Emitter Voltage - V
V
CE
- Collector-Emitter Voltage - V
Figure 4.
Figure 5.
THERMAL INFORMATION
THERMAL RESPONSE JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
Z
θ
JA
/R
θ
JA
- Normalised Transient Thermal Impedance
1·0
60%
40%
20%
10%
0·1
BULD125KC
T
A
= 25°C
LD125CZA
t1
0·01
0%
duty cycle = t1/t2
Read time at end of t1,
t2
Z
T
J
(
max
)
–
T
A
= P
D
(
peak
)
•
θ
JA
•
R
θ
JA
(
max
)
R
θ
JA
0·001
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t1 - Power Pulse Duration - s
Figure 6.
PRODUCT
INFORMATION
4
POINN [ POWER INNOVATIONS LTD ]
