BULD125KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
30
T
C
= 25°C
I
E
- Instantaneous Forward Current - A
h
FE
- Forward Current Transfer Ratio
LD125CHF
ANTI-PARALLEL DIODE
INSTANTANEOUS FORWARD CURRENT
vs
INSTANTANEOUS FORWARD VOLTAGE
10
T
C
= 25°C
LD125CVF
1·0
10
0·1
V
CE
= 1 V
V
CE
= 5 V
V
CE
= 10 V
3·0
0.01
0.1
1·0
10
100
0·01
0
0·5
1·0
1·5
2·0
2·5
I
C
- Collector Current - A
V
EC
- Instantaneous Forward Voltage - V
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
CASE TEMPERATURE
1.0
V
BE(sat)
- Base-Emitter Saturation Voltage - V
LD125CVB
I
C
= 1.5 A
I
B
= 0.3 A
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 3.
PRODUCT
INFORMATION
3
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