RELEASED
PMC-Sierra, Inc.
PM9311/2/3/5 ETT1™ CHIP SET
Data Sheet
PMC-2000164
ISSUE 3
ENHANCED TT1™ SWITCH FABRIC
Table 54. DC Electrical Characteristics for 3.3V-tolerant 2.5V CMOS (Serdes)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Voh3
Vol3
Output High V
Output Low V
1.9
0
VDD
0.4
V
Voh@2.0V,
VDD@2.3V
a
Ioh3
Iol3
Output High I
Output Low I
7
o
Tj=85 C
mA
Vol@0.4V
VDD@2.3V
a
9
o
Tj=85 C
Zout3
Vih3
Vil3
OutputImpedance
InputHighV
50
Ohm
V
1.7
0
InputLowV
0.7
a. This parameter is not tested. It is provided here as a reasonable guide to design, based on expected
process parameters.
Table 55. DC Electrical Characteristics for 200 Mbps HSTL (EPP/DS Interface)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
a
HSTLSupplyV
HSTL Ref V
1.5
0.7
1.6
1.7
0.8
VDDQ
Vref
0.75
Output High V
(Class 2)
Ioh=16mA@1.0V
Ioh=8mA@1.0V
Iol=16mA@0.4V
Iol=8mA@0.4V
VDDQ
-0.4
Voh4
Output High V
(Class 1)
Output Low V
(Class 2)
V
Vol4
0.4
Output Low V
(Class 1)
VREF
+0.05
VDDQ
+.0v
Vih4
Vil4
InputHighV
InputLowV
Load Term
VREF
-0.05
-0.5
Zterm4
(HSTL Class 1)
R1=R2=100 Ohm
Req=50 Ohm
100
Ohm
a. VDDQ is recommended to be 1.6 V to provide additional noise margin above 0.75 V for HSTL signals.
PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE
303
PMC [ PMC-SIERRA, INC ]
