Z0103/07/09 series
Philips Semiconductors
Triacs
6. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Static characteristics
IGT
gate trigger current
Z0103MA/MN/NA/NN
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
Z0103MA/MN/NA/NN
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
latching current
VD = 12 V; RL = 30 Ω; T2+ G+; T2+ G−; T2− G−;
Figure 9
-
-
-
-
-
-
-
-
-
-
-
-
3
mA
mA
mA
mA
mA
mA
5
10
5
VD = 12 V; RL = 30 Ω; T2− G+; Figure 9
7
10
IL
VD = 12 V; RL = 30 Ω; T2+ G+; T2− G−; T2− G+;
Figure 7
Z0103MA/MN/NA/NN
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
-
-
-
-
-
-
-
-
-
-
-
-
7
mA
mA
mA
mA
mA
mA
10
15
15
20
25
Z0103MA/MN/NA/NN VD = 12 V; RL = 30 Ω; T2+ G−; Figure 7
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
IH
holding current
IT = 50 mA; Figure 8
Z0103MA/MN/NA/NN
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
on-state voltage
-
-
7
mA
mA
mA
V
-
-
10
10
1.6
1.3
-
-
-
VT
Figure 6
-
1.3
VGT
gate trigger voltage
VD = 12 V; RL = 30 Ω; Tj = 25 °C; Figure 11
VD = VDRM; RL = 3.3 kΩ; Tj = 125 °C; Figure 11
-
-
-
-
V
0.2
-
V
ID
off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 °C
500
µA
Dynamic characteristics
dVD/dt critical rate of rise of
VD = 0.67 VDRM(max); Tj = 110 °C; exponential
off-state voltage
waveform; gate open; Figure 10
Z0103MA/MN/NA/NN
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
10
20
50
-
-
-
-
-
-
V/µs
V/µs
V/µs
dVcom/dt critical rate of change of VD = 400 V; IT = 1 A; Tj = 110 °C;
commutating voltage
Z0103MA/MN/NA/NN
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
dIcom/dt = 0.44 A/ms; gate open
0.5
1
-
-
-
-
-
-
V/µs
V/µs
V/µs
2
9397 750 10102
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 12 September 2002
5 of 12
NXP [ NXP ]
