Z0103/07/09 series
Philips Semiconductors
Triacs
3. Ordering information
3.1 Ordering options
Table 2:
Ordering information
Part Number
Z0103MA
Z0103NA
Z0107MA
Z0107NA
Z0109MA
Z0109NA
Z0103MN
Z0103NN
Z0107MN
Z0107NN
Z0109MN
Z0109NN
Voltage (VDRM
600 V
)
Gate Sensitivity (IGT
)
Package
3 mA
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT223
800 V
3 mA
600 V
5 mA
800 V
5 mA
600 V
10 mA
10 mA
3 mA
800 V
600 V
800 V
3 mA
SOT223
600 V
5 mA
SOT223
800 V
5 mA
SOT223
600 V
10 mA
10 mA
SOT223
800 V
SOT223
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDRM
VRRM
ITSM
repetitive peak off-state voltage
25 °C ≤ Tj ≤ 125 °C
Z0103/07/09MA; Z0103/07/09MN
Z0103/07/09NA; Z0103/07/09NN
repetitive peak reverse voltage
Z0103/07/09MA; Z0103/07/09MN
Z0103/07/09NA; Z0103/07/09NN
-
-
600
800
V
V
25 °C ≤ Tj ≤ 125 °C
-
-
600
800
V
V
non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge;
Figure 2 and Figure 3
t = 20 ms
-
-
8
A
A
t = 16.7 ms
8.5
IT(RMS)
RMS on-state current
SOT223
all conduction angles; Figure 4
Tsp = 90 °C
-
1
A
SOT54B (TO-92)
I2t for fusing
Tlead = 50 °C
-
1
A
I2t
t = 10 ms
-
0.35
20
A2s
A/µs
A
dIT/dt
IGM
rate of rise of on-state current
peak gate current
peak gate power
ITM = 1.0 A; IG = 2 x IGT; dIG/dt = 100 mA/µs
tp = 20 µs
-
-
1.0
2.0
0.1
+150
+125
PGM
PG(AV)
Tstg
-
W
average gate power
storage temperature
junction temperature
over any 20 ms period
-
W
−40
−40
°C
°C
Tj
9397 750 10102
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 12 September 2002
2 of 12
NXP [ NXP ]
