TDA8920B
Philips Semiconductors
2 × 100 W class-D power amplifier
10. Thermal characteristics
Table 6:
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Typ
Unit
[1]
[1]
thermal resistance from junction to ambient
TDA8920BTH
in free air
in free air
35
35
K/W
K/W
TDA8920BJ
Rth(j-c)
thermal resistance from junction to case
TDA8920BTH
1.3
1.3
K/W
K/W
TDA8920BJ
[1] See also Section 13.5.
11. Static characteristics
Table 7:
Static characteristics
VP = ±27 V; fosc = 317 kHz; Tamb = 25 °C; unless otherwise specified.
Symbol
Supply
VP
Parameter
Conditions
Min
Typ
Max Unit
[1]
supply voltage
±12.5 ±27
±30
V
Iq(tot)
total quiescent supply current
no load, no filter; no
-
50
65
mA
snubber network connected
Istb
standby supply current
-
150
500
µA
Mode select input; pin MODE
[2]
VI
input voltage
0
-
6
V
II
input current
VI = 5.5 V
-
100
300
0.8
3.0
6
µA
V
[2] [3]
[2] [3]
[2] [3]
Vstb
Vmute
Von
input voltage for Standby mode
input voltage for Mute mode
input voltage for Operating mode
0
-
-
-
2.2
4.2
V
V
Audio inputs; pins IN1M, IN1P, IN2P and IN2M
VI DC input voltage
Amplifier outputs; pins OUT1 and OUT2
[2]
-
0
-
V
VOO(SE)(mute)
VOO(SE)(on)
mute SE output offset voltage
-
-
-
-
-
-
-
-
15
mV
mV
mV
mV
[4]
[4]
operating SE output offset voltage
150
21
VOO(BTL)(mute) mute BTL output offset voltage
VOO(BTL)(on) operating BTL output offset voltage
Stabilizer output; pin STABI
210
Vo(stab)
stabilizer output voltage
mute and operating;
with respect to VSSP1
11
12.5 15
V
9397 750 13356
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 October 2004
12 of 34
NXP [ NXP ]
