Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
V
P
handbook, full pagewidth
1000 µF
16/40 V
100 nF
V
3
V
P1
P2
15
220 nF
IN1
IN2
7
8
45 kΩ
−
V/I
60
kΩ
V
inR
−
1
OUT1+
+
OA
+
TDA8580J
+
4 or 8 Ω
−
+
−
4
OUT2−
+
−
OA
60
kΩ
V/I
45 kΩ
V
V
px
px
45
kΩ
30 kΩ
2 Ω
BUFFER
9
220 nF
45
kΩ
BUFFER
BUFFER
+
−
100 µF
10 V
4 or 8 Ω
45 kΩ
IN5 12
−
60
kΩ
−
OA
V/I
OUT3−
14
17
220 nF
+
10
IN3
+
−
V
4 or 8 Ω
inR
+
+
OA
−
OUT4+
+
−
60
kΩ
V/I
220 nF
IN4 11
45 kΩ
+5 V
V
inL
V
10
kΩ
MUTE 13
6
DIAG
DIAGNOSTIC
INTERFACE
STANDBY
5
switching
(9 V typical)
2
16
PGND2
MGU076
PGND1
R1
(1)
R2
4.7 µF
SW1
(1) R1 and R2 values depend on Vswitching applied; the value of R1 and R2 connected in parallel should be minimum 10 kΩ.
Fig.30 Dual single-ended and one bridge-tied load application; VP ≤ 18 V.
2000 Apr 18
20
NXP [ NXP ]
