Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
V
P
handbook, full pagewidth
1000 µF
16/40 V
100 nF
V
3
V
P1
P2
15
220 nF
7
8
IN1
IN2
45 kΩ
−
V/I
60
kΩ
−
1
4
OUT1+
OUT2−
V
inL
+
OA
+
TDA8580J
+
−
4 or 8 Ω
+
−
+
−
OA
60
kΩ
V/I
45 kΩ
V
V
px
45
px
kΩ
30 kΩ
9
BUFFER
45
kΩ
BUFFER
BUFFER
100 µF
10 V
45 kΩ
IN5 12
−
60
kΩ
−
OA
V/I
14
17
OUT3−
OUT4+
+
10
IN3
+
+
−
4 or 8 Ω
+
OA
−
+
−
60
V/I
kΩ
220 nF
IN4 11
45 kΩ
+5 V
V
10
kΩ
inR
MUTE
13
5
6
DIAG
DIAGNOSTIC
INTERFACE
STANDBY
V
switching
(9 V typical)
2
16
PGND2
MGU075
PGND1
R1
(1)
R2
4.7 µF
SW1
(1) R1 and R2 values depend on Vswitching applied; the value of R1 and R2 connected in parallel should be minimum 10 kΩ.
Fig.28 Stereo bridge-tied load application; VP ≤ 18 V.
2000 Apr 18
18
NXP [ NXP ]
