Philips Semiconductors
Preliminary specification
4 × 13 W single-ended power amplifiers
TDA8511J
AC CHARACTERISTICS
VP = 15 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; measured in Fig.6; unless otherwise specified.
SYMBOL
PO
PARAMETER
CONDITIONS
note 1
MIN. TYP. MAX. UNIT
output power
THD = 0.5%
THD = 10%
PO = 1 W
4
5.5
7
−
−
−
W
W
%
5.5
−
THD
PO
total harmonic distortion
output power
0.06
RL = 2 Ω; note 1
THD = 0.5%
THD = 10%
at −1 dB; note 2
at −1 dB
−
10
13
25
−
−
W
−
−
W
fl
low frequency roll-off
−
−
Hz
kHz
dB
fh
high frequency roll-off
20
19
−
Gv
closed loop voltage gain
supply voltage ripple rejection
20
21
SVRR
note 3
on
48
46
80
50
−
−
dB
dB
dB
kΩ
mute
standby
−
−
−
−
Zi
input impedance
60
75
Vn(o)
noise output voltage
on; Rs = 0 Ω; note 4
−
50
70
50
60
−
−
µV
µV
µV
dB
dB
on; Rs = 10 kΩ; note 4 −
100
−
mute; notes 4 and 5
−
αCS
channel separation
channel unbalance
Rs = 10 kΩ
40
−
−
∆Gv
1
Dynamic distortion detector
THD
total harmonic distortion
V16 ≤ 0.6 V;
−
10
−
%
no short-circuit
Notes
1. Output power is measured directly at the output pins of the IC.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source-impedance of 0 Ω, maximum ripple amplitude of 2 V (p-p) and
at a frequency between 100 Hz and 10 kHz.
4. Noise measured in a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage independent of Rs (Vi = 0 V).
2000 Mar 10
8
NXP [ NXP ]
