Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
120
03aa11
03aa19
120
Ider
(%)
Pder 100
(%)
80
100
80
60
60
40
40
20
20
0
0
25
50
75
100
125
150
175
Tamb (oC)
0
0
25
50
75
100
125 150 175
T
(oC)
amb
P
tot
P
der
=
----------------------
×
100%
P
°
tot
(
25 C
)
V
GS
≥
10 V
I
D
I
D
=
------------------
×
100%
-
I
°
D
(
25 C
)
Fig 1. Normalized total power dissipation as a
function of ambient temperature.
102
R
DSon
= V
DS
/ I
D
I
D
(A)
10
Fig 2. Normalized continuous drain current as a
function of ambient temperature.
03ae55
tp = 10 µs
100 µs
1 ms
1
P
10 ms
δ
=
tp
T
D.C.
100 ms
10-1
tp
T
t
10-2
10-1
1
10
V
DS
(V)
102
T
amb
= 25
°C;
I
DM
is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08239
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 28 May 2001
3 of 12
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