Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
03ae59
50
g
fs
(S)
40
V
DS
> I
D
x R
DSon
T
j
= 25 ºC
104
C
iss
,
C
oss
,
C
rss
(pF)
03ae61
30
150 ºC
20
103
C
iss
C
oss
C
rss
10
0
0
10
20
30
40 I
D
(A) 50
102
10-1
1
10
V
DS
(V)
102
T
j
= 25
°C
and 150
°C;
V
DS
>
I
D
x R
DSon
V
GS
= 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03ae62
03ae60
50
I
S
(A)
40
V
GS
= 0 V
10
V
GS
I
D
= 12.5A
(V) V
DD
= 15 V
8 T
j
= 25 ºC
30
6
20
150 ºC
10
4
T
j
= 25 ºC
2
0
0
0.3
0.6
0.9 V
SD
(V) 1.2
0
0
15
30
45
60Q
G
(nC)75
T
j
= 25
°C
and 150
°C;
V
GS
= 0 V
I
D
= 12.5 A; V
DD
=15 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage;
typical values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
9397 750 08239
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 28 May 2001
7 of 12
PHILIPS [ NXP SEMICONDUCTORS ]
