Si4420DY
N-channel enhancement mode field-effect transistor
M3D315
Rev. 01 — 28 May 2001
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
1
technology.
Product availability:
Si4420DY in SOT96-1 (SO8).
2. Features
s
Low on-state resistance
s
Fast switching
s
TrenchMOS™ technology.
3. Applications
s
s
s
s
s
DC to DC convertors
DC motor control
Lithium-ion battery applications
Notebook PC
Portable equipment applications.
c
c
4. Pinning information
Table 1:
Pin
1,2,3
4
5,6,7,8
Pinning - SOT96-1, simplified outline and symbol
Description
source (s)
8
5
d
Simplified outline
Symbol
gate (g)
drain (d)
1
Top view
4
MBK187
g
s
MBB076
SOT96-1 (SO8)
1.
TrenchMOS is a trademark of Royal Philips Electronics.