Philips Semiconductors
Product specification
RDS/RBDS pre-processor
SAA6588
CHARACTERISTICS DIGITAL PART
VDDA = VDDD = 5 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VDDD
IDDD
Ptot
digital supply voltage
digital supply current
total power dissipation
4.5
5.0
5.5
V
−
−
6.0
70
−
−
mA
mW
Inputs
VIL1
LOW-level input voltage at
pins TCON, OSCI and MAD
−
−
0.3VDDD
V
VIL2
LOW-level input voltage at
pins SCL and SDA
VDDD = 4.5 to 5.0 V
−0.5
−
−
−
+1.5
V
V
V
VDDD = 5.0 to 5.5 V
−0.5
+0.3VDDD
VIH1
VIH2
ILI
HIGH-level input voltage at
pins TCON, OSCI and MAD
0.7VDDD
−
HIGH-level input voltage at
pins SCL and SDA
VDDD = 4.5 to 5.5 V
VMAD = 0 to VDDD
3.0
−
−
VDDD + 0.5 V
input leakage current at
−
10
µA
pins TCON, SCL and SDA
Ii(pu)
input pull-up current at pin MAD
VMAD = VIL1
−30
−20
−20
−
µA
µA
VMAD = 3.5 V
−
−10
Outputs
VOL1
LOW-level output voltage at
pins DAVN, PSWN and OSCO
IOL = 2 mA
−
−
0.4
V
VOL2
LOW-level output voltage at
pin SDA
IOL1 = 4.0 mA
−
−
−
−
0.4
0.6
−
V
V
V
IOL2 = 6.0 mA
−
VOH
HIGH-level output voltage at
pins DAVN, PSWN and OSCO
IOH = −2 mA
4.0
Crystal parameters
fi(xtal)
crystal input frequency
n = 1
n = 2
n = 3
n = 4
−
−
−
−
−
4.332
8.664
12.996
17.328
−
−
MHz
MHz
MHz
MHz
ppm
−
−
−
∆fosc
adjustment tolerance of oscillator
frequency
30
∆fosc(T)
temperature drift of oscillator
frequency
Tamb = −40 to +85 °C
−
−
30
ppm
CL
load capacitance
−
−
−
30
−
−
pF
Ω
Rxtal
crystal resonance resistance
f
osc ≤ 12.996 MHz
120
60
fosc = 17.328 MHz
−
Ω
1997 Sep 01
16
NXP [ NXP ]
