PRTR5V0U2X
NXP Semiconductors
Ultra low capacitance double rail-to-rail ESD protection diode
6. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Per diode
VRWM
Parameter
Conditions
Min
Typ
Max Unit
reverse standoff voltage
reverse current
-
-
5.5
100
9
V
[1]
[2]
[3]
IR
VR = 3 V
-
< 1
-
nA
V
VBR
breakdown voltage
6
-
C(I/O-GND)
input/output to ground
capacitance
f = 1 MHz;
1
1.5
pF
V(I/O-GND) = 0 V
[4]
[2]
C(I/O-I/O)
Csup
input/output to input/output f = 1 MHz;
-
-
-
0.6
16
-
-
-
pF
pF
V
capacitance
V
(I/O-I/O) = 0 V
f = 1 MHz;
CC = 0 V
supply pin to ground
capacitance
V
VF
forward voltage
0.7
[1] Measured from pin 2, 3 and 4 to ground.
[2] Measured from pin 4 to ground.
[3] Measured from pin 2 and 3 to ground.
[4] Measured from pin 2 to pin 3.
006aaa483
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2.0
1.0
C
C
(I/O-I/O)
(I/O-GND)
(pF)
(pF)
1.6
1.2
0.8
0.4
0
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
(V)
0
1
2
3
4
5
(V)
V
V
(I/O-I/O)
(I/O-GND)
f = 1 MHz; Tamb = 25 °C
f = 1 MHz; Tamb = 25 °C
Fig 2. Input/output to ground capacitance as a
function of input/output to ground voltage;
typical values
Fig 3. Input/output to input/output capacitance as a
function of input/output to input/output voltage;
typical values
PRTR5V0U2X_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 14 January 2008
4 of 11
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