PRTR5V0U2X
NXP Semiconductors
Ultra low capacitance double rail-to-rail ESD protection diode
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
Per diode
VRWM
Parameter
Conditions
Min
Typ
Max Unit
reverse standoff voltage
-
-
-
5.5
1.5
V
[1]
[2]
C(I/O-GND)
input/output to ground
capacitance
f = 1 MHz;
1
pF
V(I/O-GND) = 0 V
Csup
supply pin to ground
capacitance
f = 1 MHz;
-
16
-
pF
VCC = 0 V
[1] Measured from pin 2 and 3 to ground.
[2] Measured from pin 4 to ground.
2. Pinning information
Table 2.
Pinning
Pin
1
Symbol
GND
I/O 1
I/O 2
VCC
Description
ground
Simplified outline
Graphic symbol
4
3
2
input/output 1
input/output 2
supply voltage
4
3
1
3
4
1
2
2
006aaa482
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
PRTR5V0U2X
plastic surface-mounted package; 4 leads
SOT143B
4. Marking
Table 4.
Marking codes
Type number
PRTR5V0U2X
Marking code[1]
*R1
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PRTR5V0U2X_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 14 January 2008
2 of 11
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