PMBT3906
NXP Semiconductors
PNP switching transistor
mhc459
006aab845
600
−250
I
C
(mA)
h
I
B
(mA) = −1.5
FE
−200
−1.35
−1.05
(1)
−1.2
−0.9
400
200
0
−150
−100
−0.75
−0.45
−0.6
−0.3
(2)
(3)
−50
−0.15
0
−1
2
3
−10
−1
−10
−10
−10
0
−2
−4
−6
−8
−10
(V)
I
C
(mA)
V
CE
VCE = −1 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
mhc461
mhc462
−1200
−1200
V
(mV)
V
BEsat
(mV)
BE
−1000
−1000
−800
−600
−400
−200
(1)
(2)
(1)
(2)
−800
−600
−400
−200
(3)
(3)
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
−10
−1
−10
−10
−10
I
C
(mA)
I (mA)
C
VCE = −1 V
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 3. Base-emitter voltage as a function of
collector current; typical values
Fig 4. Base-emitter saturation voltage as a function
of collector current; typical values
PMBT3906_6
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 06 — 2 March 2010
4 of 11
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