Philips Semiconductors
Product specification
NPN switching transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector cut-off current
PMBT2222
collector cut-off current
PMBT2222A
I
EBO
h
FE
emitter cut-off current
PMBT2222A
DC current gain
I
C
= 0.1 mA; V
CE
= 10 V
I
C
= 1 mA; V
CE
= 10 V
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 1 V
DC current gain
PMBT2222
PMBT2222A
V
CEsat
collector-emitter saturation voltage
PMBT2222
PMBT2222A
collector-emitter saturation voltage
PMBT2222
PMBT2222A
V
BEsat
base-emitter saturation voltage
PMBT2222
PMBT2222A
base-emitter saturation voltage
PMBT2222
PMBT2222A
C
c
collector capacitance
I
C
= 500 mA; V
CE
= 10 V
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 50 V
PARAMETER
thermal resistance from junction to ambient
PMBT2222; PMBT2222A
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CONDITIONS
−
−
−
−
−
MIN.
MAX.
10
10
10
10
10
−
−
−
−
300
−
−
−
400
300
1.6
1
1.3
1.2
2.6
2
8
UNIT
nA
µA
nA
µA
nA
I
E
= 0; V
CB
= 50 V; T
j
= 125
°C
I
E
= 0; V
CB
= 60 V; T
j
= 125
°C
I
C
= 0; V
EB
= 5 V
35
50
75
100
50
30
40
I
C
= 10 mA; V
CE
= 10 V; T
amb
=
−55 °C
35
I
C
= 150 mA; I
B
= 15 mA; note 1
−
−
I
C
= 500 mA; I
B
= 50 mA; note 1
−
−
I
C
= 150 mA; I
B
= 15 mA; note 1
−
0.6
I
C
= 500 mA; I
B
= 50 mA; note 1
−
−
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
−
V
V
pF
V
V
V
V
mV
mV
1999 Apr 27
3
PHILIPS [ NXP SEMICONDUCTORS ]
