Philips Semiconductors
Product specification
NPN switching transistors
PMBT2222; PMBT2222A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
UNIT
Rth j-a
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
collector cut-off current
PMBT2222
IE = 0; VCB = 50 V
−
−
10
nA
IE = 0; VCB = 50 V; Tj = 125 °C
10
µA
collector cut-off current
PMBT2222A
IE = 0; VCB = 60 V
−
−
10
10
nA
IE = 0; VCB = 60 V; Tj = 125 °C
IC = 0; VEB = 5 V
µA
IEBO
emitter cut-off current
PMBT2222A
−
10
−
nA
hFE
DC current gain
IC = 0.1 mA; VCE = 10 V
IC = 1 mA; VCE = 10 V
IC = 10 mA; VCE = 10 V
35
50
75
−
−
IC = 10 mA; VCE = 10 V; Tamb = −55 °C 35
−
IC = 150 mA; VCE = 10 V
IC = 150 mA; VCE = 1 V
IC = 500 mA; VCE = 10 V
100
300
−
50
DC current gain
PMBT2222
30
40
−
−
PMBT2222A
VCEsat
collector-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1
PMBT2222
−
−
400
300
mV
mV
PMBT2222A
collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1
PMBT2222
−
−
1.6
1
V
V
PMBT2222A
VBEsat
base-emitter saturation voltage
PMBT2222
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
1.3
1.2
V
V
PMBT2222A
0.6
base-emitter saturation voltage
PMBT2222
−
−
−
2.6
2
V
PMBT2222A
V
Cc
collector capacitance
8
pF
1999 Apr 27
3
NXP [ NXP ]
