Philips Semiconductors
Product specification
NPN switching transistors
PMBT2222; PMBT2222A
FEATURES
PINNING
PIN
• High current (max. 600 mA)
• Low voltage (max. 40 V).
DESCRIPTION
1
2
3
base
emitter
collector
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
handbook, halfpage
3
NPN switching transistor in a SOT23 plastic package.
PNP complements: PMBT2907 and PMBT2907A.
3
1
MARKING
2
TYPE NUMBER
PMBT2222
MARKING CODE(1)
1
2
1B
1P
Top view
MAM255
PMBT2222A
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
PMBT2222
−
−
60
V
V
PMBT2222A
75
VCEO
collector-emitter voltage
PMBT2222
open base
−
−
30
40
V
V
PMBT2222A
VEBO
emitter-base voltage
PMBT2222
open collector
−
−
−
−
−
−
5
V
V
PMBT2222A
6
IC
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
600
800
200
250
+150
150
+150
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
Tamb ≤ 25 °C; note 1
−65
−
°C
Tamb
−65
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 27
2
NXP [ NXP ]
