Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC2300
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
43
K/W
MDA244
2
10
handbook, full pagewidth
(1)
(2)
R
th js
(K/W)
(3)
(4)
10
(5)
(6)
(7)
(8)
(9)
t
1
p
P
δ =
T
(10)
t
t
p
T
−1
10
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
t
(s)
p
(1) δ = 1.00.
(6) δ = 0.1.
(2) δ = 0.75.
(7) δ = 0.05.
(3) δ = 0.5.
(4) δ = 0.33.
(9) δ = 0.01.
(5) δ = 0.2.
(10) δ = 0.
(8) δ = 0.02.
Fig.5 Transient thermal resistance from junction to soldering point as a function of pulse time
for N- and P-channels; typical values.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
Per FET
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage
N-channel
P-channel
V
GS = 0; ID = 10 µA
GS = 0; ID = −10 µA
300
−
−
−
−
V
V
V
−300
VGSth
gate-source threshold voltage
N-channel
VGS = VDS; ID = 1 mA
GS = VDS; ID = −1 mA
0.8
−
−
2
V
V
P-channel
V
−0.8
−2
IDSS
drain-source leakage current
N-channel
VGS = 0; VDS = 240 V
−
−
−
−
100
nA
P-channel
VGS = 0; VDS = −240 V
−100 nA
1997 Oct 24
5
NXP [ NXP ]
